FinFET with Rounded Source/Drain Profile

ABSTRACT

A method of forming a FinFET with a rounded source/drain profile comprises forming a fin in a substrate, etching a source/drain recess in the fin, forming a plurality of source/drain layers in the source/drain recess; and etching at least one of the plurality of source/drain layers. The source/drain layers may be a silicon germanium compound. Etching at the source/drain layers may comprises partially etching each of the plurality of source/drain layers prior to forming subsequent layers of the plurality of source/drain layers. The source/drain layers may be formed with a thickness at a top corner of about 15 nm, and the source/drain layers may each be etched back by about 3 nm prior to forming subsequent layers of the plurality of source/drain layers. Forming the plurality of source/drain layers optionally comprises forming at least five source/drain layers.

PRIORITY

This application claims the benefit to and is a continuation of U.S.patent application Ser. No. 13/792,475, filed on Mar. 11, 2013, andentitled “FinFET with Rounded Source/Drain Profile,” which applicationis incorporated herein by reference.

BACKGROUND

As modern integrated circuits shrink in size, the associated transistorsshrink in size as well. In order to operate with predictable properties,transistor production focused initially on shrinking feature size oftransistors. However, as the size of transistor features has approachedatomic sizes, new transistor designs have been developed. Fin fieldeffect transistors (FinFETs) are sometimes used to replace lateral metaloxide semiconductor field effect transistors (MOSFETs), enabling greatertransistor packing density while maintaining predictable deviceperformance.

Traditionally, a lateral transistor such as a MOSFET has a source anddrain disposed in a semiconductor, with a gate disposed on the surfaceof the semiconductor between the source and drain. A FinFET has achannel region in a raised fin, with the gate insulator and gate contactcovering one or more sides of the fin in a channel region. A source anddrain may be formed on each side of the channel region.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIGS. 1-11 are cross-sectional views of FinFET device in intermediatesteps of production according to an embodiment;

FIGS. 12A-12B are isometric views of FinFET device in intermediate stepsof production according to an embodiment;

FIG. 13 is a cross-sectional view of a FinFET end region according to anembodiment; and

FIG. 14 is a flow chart of a method for forming a FinFET deviceaccording to an embodiment.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the variousembodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the illustrative embodiments are discussed indetail below. It should be appreciated, however, that the presentdisclosure provides many applicable concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative of specific ways to make and use the embodimentsof the disclosure, and do not limit the scope of the disclosure.

The present disclosure will be described with respect to embodiments ina specific context, forming source and drain regions in FinFET devices.The embodiments of the disclosure may also be applied, however, to avariety of semiconductor devices. Hereinafter, various embodiments willbe explained in detail with reference to the accompanying drawings.

A FinFET device may be formed by doping a source and drain region in asemiconductor fin or by depositing a source and drain on opposite sidesof a gated fin region. Silicon germanium (SiGe) may, in an embodiment,be used to grow the source/drain regions using an epitaxial growthprocess. However, since the FinFETs tend to be formed parallel to eachother, growing SiGe source/drain regions may cause bridging between thesource/drain regions in adjacent FinFETs. This issue is particularlypronounced when the fin pitch, or distance between adjacent fins, isreduced. The proximity of fins as the SiGe source/drain regions growlimits the size of the source/drain regions. Epitaxially grown SiGe tendto form a faceted crystalline shape, and a diamond shaped crystal inparticular. The diamond shape exhibited by SiGe crystal grown createscorners at the top and on the sides of the source/drain regions inrelation to the fin. The corners formed on the sides of the SiGe crystaltend to grow sideways, towards adjacent fin source/drain regions. It isthese corners from adjacent fins that tend to join, bridging thesource/drain region of adjacent SiGe crystals. In an embodiment, theSiGe source/drain regions may be grown in layers, with each SiGe layeretched to remove the corners of the SiGe layer, creating a roundedprofile and permitting a greater height-to-width aspect ratio and finerfin pitch.

FIG. 1 is a cross-sectional view of an initial substrate 102 forcreating fins. A mask 104 may be applied to a top surface of thesubstrate 102, with the mask defining where fins may be created. In theembodiment shown in FIG. 1, the mask is a positive mask, and thesubstrate 102 may be etched away through openings in the mask 104. In anembodiment, the substrate may be a semiconductor such as silicon,gallium arsenide, or the like. Additionally, the substrate 102 may bedoped prior to mask 104 application. The mask 104 may be a hard masksuch as a nitride or oxide, or may be another type of mask such as aspincoated photoresist. In one embodiment, the fin 202 pitch may bebetween about 38 nm and about 48 nm, which may be used, in anembodiment, in 10 nm to 16 nm FinFET fabrication processes. In anotherembodiment, the fin 202 pitch may be about 30 nm in a 7 nm FinFETfabrication process.

FIG. 2 is a cross-sectional view of fins 202 etched in a substrate 102.The substrate may be etched to remove material between the fins 202. Inan embodiment, the mask 104 (FIG. 1) may be removed after etching. Inanother embodiment, the mask 104 may be a hard mask remaining on the fin202, with a subsequent gate contact 302 (See FIG. 3) deposited over themask 104.

FIG. 3 is a cross-sectional view of formation of shallow trenchisolation structures (STIs) 306 and a gate contact 302. FIG. 12Aillustrates an isometric view of a gate contact 302 and insulating layer304 (STIs omitted in FIG. 12A for clarity), with FIG. 3 being across-section along plane AA.

STIs 306 may be formed between the fins 202 in the etched spaced betweenthe fins 202, formed as illustrated in FIG. 2, and then filling theetched trench with a dielectric such as an oxide. The fins 202 may beetched to have a depth greater than a final predetermined fin depth. Forexample, a predetermined fin height may be about 35 nm, yet the fins maybe etched to a depth of about 60 nm or more, with the STI filling thebottom of the spaces between the fins 202 to a depth of about 20 nm ormore.

A gate insulating layer 304 may be formed over a portion of the fins202. In the illustrated embodiment, the insulating layer 304 is shown asformed over the fins 202 without being formed over the STIs 306.However, in another embodiment, the insulating layer 304 may be formedas a single continuous structure extending over multiple fins 202. Suchan insulating layer 304 may be formed by growing an oxide on thesurfaces of the fins 202, for example, by thermal oxidation, to createan oxide insulating layer 304. In another embodiment, the insulatinglayer may be a high-k material, nitride, or another insulator.

A gate contact 302 may be formed over the insulating layer 304. In theillustrated embodiment, the gate contact 302 is formed over multiplefins 202, however, in another embodiment, individual gate contacts maybe formed over each fin, permitting individualized control of each gate.

FIG. 4 shows a cross-sectional view of formation of source/drainrecesses 402. FIG. 12B illustrates an isometric view of source, withFIG. 4 being a cross-section along plane BB. In an embodiment, the fins202 (FIG. 3) are etched away, with the etching removing the substrate102 below the surface of the STIs 306 to create source/drain recesses402. In an embodiment, the source/drain recesses may be etched to adepth of about 55 nm below the topmost surface of the fins 202.

FIG. 5 shows a cross-sectional view of formation of a first source/drainlayer 502 of a source/drain structure 504. A source and drain structure504 may be formed on opposing sides of a gate contact 302 (FIG. 4). Thefirst source/drain layer 502 may be grown to a height above the STIs 306by a height of about 15 nm. In an embodiment, the source/drain structure504 is grown from SiGe using an in-situ epitaxial growth process. Inanother embedment, the source/drain structure 504 may be formed of adoped SiGe compound, for example, by doping with boron, phosphorus,arsenic or a like material. The crystalline growth of SiGe results inside corners 502A and a top corner 502B. The crystalline structurecauses the side corners 502A to have an angle of 109.6 degrees. However,SiGe crystals tend to grow with a constant aspect ratio, with the ratioof the height to the width remaining constant. Thus, as the firstsource/drain layer 502 grows, the source/drain structure 504 will widenas it grows. Growing the SiGe structures in stages, with the sidecorners 502A reduced by etching at each stage, prevents adjacent SiGestructures from bridging.

FIG. 6 shows a cross-sectional view of etch back of the source/drainstructure 504. In an embodiment where the source/drain structures 504are SiGe, the source/drain structures 504 may be selectively etched tomodify the side corners 502A (FIG. 5) and top corner 502B (FIG. 5) tocreate rounded side corners 602A and rounded top corner 602B, resultingin a rounded first source/drain layer 602. Additionally, etching theSiGe source/drain structure 504 in its initial angular form tends toremove more material at the corners than on the flat portions due to thedifferent ratios of surface area to volume. In an embodiment, the sidecorners 502A (FIG. 5) and top corner 502B (FIG. 5) of the firstsource/drain layer 502 (FIG. 5) may be etched back by about 3 nm,depending on the overall size of the source/drain structure 504. Theetching may, in an embodiment, be performed using an HCl solution at apressure between about 10 torr and about 30 torr.

Etching a PMOS device may be accomplished in an embodiment, by selectiveetching, while etching an NMOS device may be accomplished by masking andetching. Additionally, a PMOS device may be etched with HCl at atemperature between about 600° C. and about 700° C. while an NMOS devicemay be etched with HCl at a temperature between about 650° C. and about700° C.

FIG. 7 illustrates formation of a second source/drain layer 702 and FIG.8 is a cross sectional view of a forming a rounded second source/drainlayer 802. In an embodiment, a second source/drain layer 702 of SiGematerial may be epitaxially grown using a method similar to that used togrow the first source/drain layer 502 (FIG. 5). The rounded profile ofthe rounded first source/drain layer 602 causes the second source/drainlayer 702 take on a slightly rounded profile at the corners. In anembodiment, the second source/drain layer 702 will be grown to athickness where the corners do not achieve the full angular profileexhibited by monocrystalline SiGe structure.

The second source/drain layer 702 may be formed at a thickness of about15 nm over the rounded first source/drain layer 602 at the top corner.The second source/drain layer 702 may be etched back to form a roundedsecond source/drain layer 802. In an embodiment, the second source/drainlayer 702 may be etched back by about 3 nm at the top corner. Thus, theoverall thickness at the corners of the rounded second source/drainlayer 802 may be about 12 nm.

FIG. 9 illustrates formation of a third source/drain layer 902 and FIG.10 is a cross sectional view of a forming a rounded third source/drainlayer 1002. The third source/drain layer may be formed and etched backusing a epitaxial growth method similar to the embodiments describedabove with respect to FIGS. 5-8. Subsequent layers may also be formedaccording to the processes described above.

FIG. 11 illustrates formation of a top source/drain layer 1102. In anembodiment, the lower rounded source/drain layers 602, 802, 1002 whilehave achieved a rounded profile, and deposition of the top source/drainlayer 1102 creates a rounded final, or top, layer. Such rounded profilesprior to the formation of the top source/drain layer 1102 will preventbridging of adjacent top source/drain layers 1102, as the spacingbetween the adjacent lower layer 602, 802, 1002 permits formation of thetop source/drain layer 1102 without bridging. In an embodiment, the topsource/drain layer 1102 may be formed through epitaxial growth asdescribed above, and may be formed without etching back the topsource/drain layer 1102. While the top source/drain layer 1102 isillustrated in FIG. 11 as thicker than the other layers, it should berecognized that, depending on the height of the rounded source/drainstructure 1104, the thickness of each layer may vary, and any number oflayers may be formed, with the topmost source/drain layer being freefrom etching. In an embodiment, a device may be formed with fivesource/drain layers, including the top source/drain layer ofsource/drain. However, in another embodiment, the source/drain structure1104 may have at least three layers.

FIG. 13 illustrates a cross-sectional view of a rounded source/drainstructure 1104 at an end section of a FinFET according to an embodiment.The fin 202 is illustrated for clarity. For example, the fin 202 mayhave a fin height 1302 in the channel region under the gate contact 302(see FIGS. 3, 12A). The rounded source/drain structure 1104 may extendabove the entirety of the fin 202. The top corner, or peak, of therounded source/drain structure 1104 may extend above the uppermostportion of the fin by a source/drain extension height 1304. Thus, thetotal height 1308 of the source/drain structure above the surface of thesubstrate 102 is the fin height 1302 plus the source/drain extensionheight 1304. In an embodiment, the rounded source/drain structure 1104extends above the entirety of the fin 202 top surface. The roundedsource/drain structure 1104 may have an upper portion extending abovethe top surface of the fin 202, and extending laterally beyond the edgesof the top surface of the fin 202.

In an embodiment, the fin height 1302 may be about 35 nm, and the totalheight 1308 of the source/drain structure 1104 may be about 60 nm, andthe width 1306 may be about 43 nm. Thus, a source/drain structure 1104may have five layers each having a height of about 12 nm, resulting inan overall total height 1308 of about 60 nm. With spacing betweenadjacent source/drain structures of about 5 nm, the ratio of the widthto the height, or aspect ratio, of a source/drain structure may begreater than about 0.75.

It should be appreciated that additional layers may be created on thesource/drains structure 1104, permitting greater height while marginallyincreasing the width 1306 of the source/drain structure 1104. Forexample, in an embodiment, the fin pitch may be about 48 nm, and thesource/drain structure 1104 may be an epitaxially grown SiGe structurewith a height greater than about 55 nm. Additionally, a bottom portion1310 of source/drain structure is grown within the source/drain recess402, with the source/drains structure 1104 extending from below the topsurface of the STIs 306 to above the top surface of the fins 202.

A SiGe source/drain structure grown as a single layer would generallystart to bridge across adjacent fins at a source/drain structure heightof about 45 nm due to the geometry of a single crystal SiGe source/drainstructure. However growing the rounded SiGe drain/source structure 1104in layers with etch back between layers forms a taller, narrowerstructure.

In an embodiment, the cross sectional area of the rounded source/drainstructure 1104 may be greater than one-half (½), or even two-thirds (⅔)of the area of product of the rounded source/drain structure height 1308and width 1306. Such cross-sectional fill above the top surface of thefin 202 results in less leakage current in the device and greater deviceperformance.

FIG. 14 is a flow chart of a method 1400 for forming a FinFET deviceaccording to an embodiment. A substrate is provided in block 1402, andSTI structures 306 may optionally be formed in the substrate 102 inblock 1404. One or more fins 202 may be formed in the substrate 102 inblock 1406. The fins 202 may be formed by etching a substrate 102, orby, for example, forming the fins 202 through deposition, epitaxialgrowth, or the like. A gate structure comprising, for example, a gatecontact 302 and a gate insulator 304 may be formed in block 1408. A gatespacer 404 may be formed in block 1410. The fins 202 may be etched backin the source/drain regions in block 1412. A source/drain layer may begrown in the etched back fin 202 source drain region in block 1414. Thesource/drain layer 502 may be etched back in block 1416. Subsequentsource/drain layers 702, 902, 1102 may be formed over the firstsource/drain layer by repeating block 1414, with each additionalsource/drain layer 702, 902, 1102 optionally etched back, as in block1416. One or more contacts to the source/drain structures 1104 may beformed in block 1418. In an embodiment, the source/drain structures 1104may, for example, have a silicide formed thereon, and a metal contactformed over the silicide region.

While the steps described for the embodiment above are described in anorder, it will be recognized that some steps may be performed inalternate orders without deviating from the principles of theembodiments herein.

Thus, in an embodiment a method of forming a FinFET with a roundedsource/drain profile comprises forming a fin in a substrate, etching thefin back to create a source/drain recess, forming a plurality ofsource/drain layers in the source/drain recess, and etching at least oneof the plurality of source/drain layers. The source/drain layers may bea silicon germanium compound. Etching at the source/drain layers maycomprises partially etching each of the plurality of source/drain layersprior to forming subsequent layers of the plurality of source/drainlayers. The source/drain layers may each be formed with a thickness at atop corner of about 15 nm, and the source/drain layers may be etchedback by about 3 nm prior to forming subsequent layers of the pluralityof source/drain layers. Forming the plurality of source/drain layersoptionally comprises forming at least five source/drain layers. The finmay be formed as one of a plurality of fins, which may have a fin pitchof less than about 48 nm. Each of the plurality of source/drainstructures may be formed with a cross sectional area of at leasttwo-thirds of the area of a product of a height and a width of thesource/drain structures, and optionally with a width to height ratio ofat least 0.75.

A device according to an embodiment may comprise a fin disposed on asubstrate, a gate structure disposed over the fin, and a source/drainstructure disposed adjacent to the gate structure, with the source/drainstructure having a rounded profile. A lower portion of each source/drainstructure may be disposed in a recess between at least two shallowtrench isolation (STI) structures. The source/drain structure may haveat least five layers and source/drain structure comprises a top portionabove a top surface of the fin, with the top portion extending laterallybeyond edges of the top surface of the fin. The source/drain structureoptionally has a width to a height ratio of at least 0.75 and may be asilicon germanium compound. The device may further comprise a STIdisposed in the substrate below the fin, and the source/drain structuremay extend at least 55 nm above the STI.

One general aspect of embodiments described herein includes a device,including: a fin disposed on a substrate, the fin including asource/drain recess, the source/drain recess having a bottom surface ata first height above the substrate, a channel region at a second heightabove the substrate, the second height being greater than the firstheight, and a step between the bottom surface of the source/drain recessand the channel region; a gate structure disposed over the fin; and asource/drain structure disposed adjacent to the gate structure andwithin the source/drain recess, the source/drain structure including afirst epitaxial source/drain layer having a rounded profile, a secondepitaxial source/drain layer overlying the first epitaxial source/drainlayer, the second epitaxial source/drain layer having a rounded profileand a top epitaxial source/drain layer overlying the second epitaxialsource/drain layer, a lower portion of each source/drain structuredisposed in a recess between at least two shallow trench isolation (STI)structures.

Another general aspect of embodiments described herein includes adevice, including: a first fin and a second fin respectively extendingfrom a major surface of a substrate; the first fin including asource/drain recess in a first source/drain region, a first channelregion and a step between the first channel region and a bottom of thesource/drain recess; a plurality of source/drain layers in thesource/drain recess; each of the plurality of source/drain layers havinground corners; a topmost source/drain layer over the plurality ofsource/drain layers; a second plurality of source/drain layers adjacenta second channel region of the second fin; and a gate structure over andextending along sidewalls of the first fin and the second fin, where theplurality of source/drain layers is physically separated from the secondplurality of source/drain layers.

Yet another general aspect of embodiments described herein includes amethod of forming a device, including: forming a first fin and a secondfin in a substrate; etching back the first fin to create a source/drainrecess in a first source/drain region while leaving a first channelregion of the first fin un-etched, thus forming a step between theun-etched channel region and a bottom of the source/drain recess;filling the source/drain recess with a sequence of source/drain layersin the source/drain recess where each source/drain layer of the sequenceof source/drain layers is epitaxially grown with a faceted profile andthen etched to at least partially round corners of the faceted profilebefore a next source/drain layer of the sequence of source/drain layersis epitaxially grown; and epitaxially growing a topmost source/drainlayer over the sequence of source/drain layers.

Although embodiments of the present disclosure and its advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the disclosure as defined by the appendedclaims.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the present disclosure, processes, machines,manufacture, compositions of matter, means, methods, or steps, presentlyexisting or later to be developed, that perform substantially the samefunction or achieve substantially the same result as the correspondingembodiments described herein may be utilized according to the presentdisclosure. Accordingly, the appended claims are intended to includewithin their scope such processes, machines, manufacture, compositionsof matter, means, methods, or steps.

What is claimed is:
 1. A device, comprising: a fin disposed on asubstrate, the fin including a source/drain recess, the source/drainrecess having a bottom surface at a first height above the substrate, achannel region at a second height above the substrate, the second heightbeing greater than the first height, and a step between the bottomsurface of the source/drain recess and the channel region; a gatestructure disposed over the fin; and a source/drain structure disposedadjacent to the gate structure and within the source/drain recess, thesource/drain structure including a first epitaxial source/drain layerhaving a rounded profile, a second epitaxial source/drain layeroverlying the first epitaxial source/drain layer, the second epitaxialsource/drain layer having a rounded profile and a top epitaxialsource/drain layer overlying the second epitaxial source/drain layer, alower portion of each source/drain structure disposed in a recessbetween at least two shallow trench isolation (STI) structures.
 2. Thedevice of claim 1, wherein the source/drain structure has at least fivelayers.
 3. The device of claim 1, wherein the source/drain structurecomprises a top portion above a top surface of the fin, the top portionextending laterally beyond edges of the top surface of the fin.
 4. Thedevice of claim 3, wherein the source/drain structure has a width to aheight ratio of at least 0.75.
 5. The device of claim 1, wherein thesource/drain structure is a silicon germanium compound.
 6. The device ofclaim 1, further comprising at least two STI structures disposed in thesubstrate below the fin, wherein the source/drain structure extends atleast 55 nm above the at least two STI structures.
 7. The device ofclaim 1, further comprising a plurality of fins, wherein the fins arespaced with a pitch of less than about 48 nm.
 8. The device of claim 1,wherein the source/drain structure has a width to height ratio of atleast 0.75.
 9. A device, comprising: a first fin and a second finrespectively extending from a major surface of a substrate; the firstfin including a source/drain recess in a first source/drain region, afirst channel region and a step between the first channel region and abottom of the source/drain recess; a plurality of source/drain layers inthe source/drain recess; each of the plurality of source/drain layershaving round corners; a topmost source/drain layer over the plurality ofsource/drain layers; a second plurality of source/drain layers adjacenta second channel region of the second fin; and a gate structure over andextending along sidewalls of the first fin and the second fin, whereinthe plurality of source/drain layers is physically separated from thesecond plurality of source/drain layers.
 10. The device of claim 9,further comprising an isolation layer between the first fin and thesecond fin.
 11. The device of claim 9, further comprising a continuousgate insulating layer formed over the first fin and the second fin. 12.The device of claim 9, wherein the plurality of source/drain layersincludes at least five layers.
 13. The device of claim 9, wherein thetopmost source/drain layer is thicker than a source/drain layer of theplurality of source/drain layers.
 14. The device of claim 9, wherein athickness of each source/drain layer of the plurality of source/drainlayers is greater than a thickness of an immediately adjacentsource/drain layer of the plurality of source/drain layers.
 15. Thedevice of claim 9, wherein a respective thickness of a source/drainlayer of the plurality of source/drain layers increases from abottommost a source/drain layer of the plurality of source/drain layersto a topmost a source/drain layer of the plurality of source/drainlayers.
 16. A method of forming a device, comprising: forming a firstfin and a second fin in a substrate; etching back the first fin tocreate a source/drain recess in a first source/drain region whileleaving a first channel region of the first fin un-etched, thus forminga step between the un-etched channel region and a bottom of thesource/drain recess; filling the source/drain recess with a sequence ofsource/drain layers in the source/drain recess wherein each source/drainlayer of the sequence of source/drain layers is epitaxially grown with afaceted profile and then etched to at least partially round corners ofthe faceted profile before a next source/drain layer of the sequence ofsource/drain layers is epitaxially grown; and epitaxially growing atopmost source/drain layer over the sequence of source/drain layers. 17.The method of claim 16, wherein each source/drain layer of the sequenceof source/drain layers is etched using an HCl solution at a pressurebetween about 10 torr and about 30 torr.
 18. The method of claim 16,wherein filling the source/drain recess with a sequence of source/drainlayers includes epitaxially growing respective SiGe layers.
 19. Themethod of claim 16, where each source/drain layer of the sequence ofsource/drain layers is etched to prevent a resulting source/drainstructure from physically contacting an adjacent source/drain structure.20. The method of claim 16, further comprising epitaxially growing thesequence of source/drain layers and the topmost source/drain layer toextend at least 55 nm above an isolation structure that extends betweenthe first fin and the second fin.